Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm Ca (No air compressor is required

(No air compressor is required

LiNiCoMnO2 (Lithium Nickel Manganese Cobalt Oxide) powder for efficient and stable Li-ion battery cathode

Vacuum Flanges

NRTL or CSA certification is available upon request at extra cost

Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm Ca (No air compressor is requiredNickel Metallic Film Nickel Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Roughness, RMS: N A Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 4" diameter + 0. 5 mm x 0. 525 + 0. 025 mm th Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click