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Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm Tube Furnaces Time interval: 1 - 900s
Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm Tube Furnaces Time interval: 1 - 900s
$57.44
Description
Time interval: 1 - 900s Max
Weight: 87
Battery Analyzer (Optional)
1 mm (+/-0
Ge Substrate (111) 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm Tube Furnaces Time interval: 1 - 900sSpecifications Growing Method: CZ Wafer Size: 10x10x0. 4 0. 5 mm Surface Polishing: two sides epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 10x10x 0.4-0.5 mm, 2 SP, Undoped ,R>50 ohm.cm Tube Furnaces Time interval: 1 - 900s){kind=link}
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