Home
»
»
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Ball mill and sieve the
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Ball mill and sieve the
$74.75
Description
Ball mill and sieve the powder and apply only the 32~75 microns powder to the pressing die to avoid damages
Demonstration of Vanadium Redox Flow Cell Testing System
strong acid and alkaline
Operating Temperature 5 - 40°C
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Ball mill and sieve theGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5mm Polishing: two sides polished; Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (0. 6 2. 0)E8 Ohm. cm Mobility: 5350 6380 cm^2 v. s. EPD: <5000 cm2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 undoped Semi-Insulated 10x10 x0.5 mm, 2SP Glovebox Ball mill and sieve the){kind=link}