Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CdTe Doped Zn (CZT) strong acid and alkaline

strong acid and alkaline

30 mm Thickness Density

Resistivity:                  0

One top-pressing die

Ge Substrate: (100)+/- 2 degree, 10x3 x 0.5 mm , 2SP, P type Ga doped,R:10-15 ohm.cm CdTe Doped Zn (CZT) strong acid and alkalineGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 3 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100)+ 2 degree Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 10 15 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other