7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mmGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 45mm(+ _ 0. 05mm), Doping: undoped, Conducting type: N type, Orientation: (111)+_30' Flats: SEMI: PF:<110> SF:<112> Mobility: 150 cm^2 Vs Resistivity: >7 x10^7 ohm. cm Carrier Concentration: 9 x10^8 cm^ 3 EPD:<=8x10^4 cm^ 2 Polished: two sides polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3"> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mm"> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mmGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 45mm(+ _ 0. 05mm), Doping: undoped, Conducting type: N type, Orientation: (111)+_30' Flats: SEMI: PF:<110> SF:<112> Mobility: 150 cm^2 Vs Resistivity: >7 x10^7 ohm. cm Carrier Concentration: 9 x10^8 cm^ 3 EPD:<=8x10^4 cm^ 2 Polished: two sides polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3"> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mm"> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mmGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 45mm(+ _ 0. 05mm), Doping: undoped, Conducting type: N type, Orientation: (111)+_30' Flats: SEMI: PF:<110> SF:<112> Mobility: 150 cm^2 Vs Resistivity: >7 x10^7 ohm. cm Carrier Concentration: 9 x10^8 cm^ 3 EPD:<=8x10^4 cm^ 2 Polished: two sides polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3"> GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mm – digilifeset.online

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GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mm

$376.62

Quantity
7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mm">
Description

100mm x 80mm

8 pt 0 2 MicrosoftInternetExplorer4 /* Style Definitions */ table

~25 microm

4 @ 300K  at A axis

GaP wafer undoped (111) 2" diaX 0.45mm 2sp,R> 7 x10^7 ohm.cm,Semi-Insulating CeO2 100mm x 80mmGaP single crystal wafer, Size: 2" diameter(+ _0. 15mm) x 0. 45mm(+ _ 0. 05mm), Doping: undoped, Conducting type: N type, Orientation: (111)+_30' Flats: SEMI: PF:<110> SF:<112> Mobility: 150 cm^2 Vs Resistivity: >7 x10^7 ohm. cm Carrier Concentration: 9 x10^8 cm^ 3 EPD:<=8x10^4 cm^ 2 Polished: two sides polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3

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