Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick Pellet Presses

Silicon-on-Sapphire (11-02, R Plane), 10mm x 10mm x 0.46mm, 2sp, Film: 0.5 um thick Pellet PressesSilicon on sapphire (SOS) is a hetero epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0. 6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation. Materials: Silicon on Sapphire Silicon EPI Layer: Silicon

Operating Temperature 1200ºC Application Notes Vacuum pressures may only be safely used up to 1000°C

Polished: One  side  polished

Note: The door must be closed during use

and emulsification of metals

High optical uniformity

800ºC < 8hrs @ 400W (Air

A cost-effective

Wafer size: 3" dia x 0

No warranty for the tube

This electrode sheet is based on Aluminum foil coated by Lithium Nickel Cobalt Aluminum Oxide (NCA811) on double sides and can be used as the cathode of Li-Ion battery -- 5 sheets /bag

please click the picture below for a detailed size

Tips: You may use a binder like below: