PbTe (100) Purity :99.999% N type,10x10x1.0 mm, 2sp(60/40) - PbTea101010S2US YSZ (Yittrium stabilized ZrO2) otherwise the Li chip will

otherwise the Li chip will react with N2 to form dark red Li3N

Orientation:                      c-axis (0001) +/- 1

One side polished

15±15% Pa-1

PbTe (100) Purity :99.999% N type,10x10x1.0 mm, 2sp(60/40) - PbTea101010S2US YSZ (Yittrium stabilized ZrO2) otherwise the Li chip willPbTe single crystal substrate Size: 10x10x1. 0 mm Type: N type Orientation: (100) + 1 degree Polishing: two sides polished(60 40) Resistivities: 0. 002 0. 005 ohm. cm Basic properties Material PbS PbSe PbTe Structure Cubic Cubic Cubic Density 7. 60 g cm^3 8. 15 g cm^3 8. 16 g cm^3 Thermal conductivity (at 25 deg C) 0. 03 W cmK 0. 017 W cmK 0. 0017 W cmK Refractive index (?= 6 um) 4. 19 4. 54 5. 48 Direct bandgap 0. 37 eV 0. 27 eV 0. 32 eV