SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20) please contact us for the

please contact us for the instruction

Operation Manual

Shipping dimension 45" x 42" x 35"

You may use silver glue stick spring with spacer to prevent moving

SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20) please contact us for theSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 10x10 x 0. 26 + 0. 03 mm Polished: two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp: <25 um Micropipe