GaP Wafer, Zn-doped (111) 2"x0.45 mm, 1sp Al2O3 Sample Plate

GaP Wafer, Zn-doped (111) 2"x0.45 mm, 1sp Al2O3 Sample PlateSpecifications: GaP single crystal wafer Doping: Zn doped Type of conductivity: P Orientation: (111) Size: 2" diameter x 0. 45 mm Polished: one side polished Resistivity:(6. 91 7. 50) E 2 ohm. cm Mobility: (63 65) cmE2 Vs Carrier Concentration: (1. 28 1. 39)E18cmE 3 EPD: <= 8E4 cmE 2 Surface finish (RMS or Ra) : < 8A Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Working temperature: 1700°C (in air)  Max

Air-lock Chamber Dimensions: 200mm(ID) x 232mm(L)

Steel frame with tempered glass front panel

There is ~200nm AlN buffer layer between the silicon and GaN

Application Notes Choose the quartz crystal with the right electrode material for your application - gold

Purchase replacement electrode here

Stroke Length 20mm +/- 0

especially:

Configuration of Right Flange:

and ceramics

This copper foil (9 um)  is used as a substrate for coating anode materials in Li-Ion battery research

2 mm (+/-0