GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 Optional The 4" sintered diamond

Optional The 4" sintered diamond blade is the replacement for SYJ-150 Low Speed Cutting Saw

Polishing:                     single side polished

50ml Stainless Steel mixing container for Bench-top V-Shape Ball Grinding & Mixing Machine MSK-SFM-11

Edge: Hand Seam (< 0

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 Optional The 4" sintered diamondGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm