99% (AlN5116) Size: 1" x 1" x 0. 635 mm Polishing: Fine Ground Surface Roughness: < 100A RMS"> 99% (AlN5116) Size: 1" x 1" x 0. 635 mm Polishing: Fine Ground Surface Roughness: < 100A RMS"> 99% (AlN5116) Size: 1" x 1" x 0. 635 mm Polishing: Fine Ground Surface Roughness: < 100A RMS"> AlN Ceramic Substrate 1"x1"x 0.635mm, fine ground Te Mobility: 105-110 cm^2/V – digilifeset.online

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AlN Ceramic Substrate 1"x1"x 0.635mm, fine ground Te Mobility: 105-110 cm^2/V

$125.35

Quantity
Description

Mobility: 105-110 cm^2/V

which only can be used one time ( order spare BN by click Pic 3)

Lattice constant: a =3

and must be stored in desiccator box

AlN Ceramic Substrate 1"x1"x 0.635mm, fine ground Te Mobility: 105-110 cm^2/VSpecifications: AlN Ceramic Substrate made by tape casting Purity: > 99% (AlN5116) Size: 1" x 1" x 0. 635 mm Polishing: Fine Ground Surface Roughness: < 100A RMS

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