SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm Flow cell test system

SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm Flow cell test systemSilicon Wafer Specifications: Film: SiO2+Ti+Pt(111) thin film on Si (100) (P type) substrate ,2"x0. 279mm, 1 side polished (1sp) SiO2=300 nm Ti=10 nm Pt(111)=150 nm Resistivity: 1 20 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Substrate Size: 2" diameter + 0. 5 mm x 0. 279 mm Polish: one side polished Surface roughness: < 20 A RMS Maximum Thermal Budget of Pt

Product Structure

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Size:                      2" dia x 0

and it can be used immediately

Model  NT00  Voltage  500 V~120KA

Wafer size: 1" dia x 0

Turn on the water outlet when flushing the water bowl/base to avoid liquid overflowing during the operation

A perfect fit for the cases formed by the standard size MSK-120

Wafer Size:                    10 x 10 x0

Series ITV1000 compact electronic pressure regulators join the ITV line-up

Tungsten coil heater and alumina crucible for high-temperature evaporation up to 1300 ºC