Boron-Doped Diamond on Silicon Substrate Orientation 10-10 EPD: < 5000cm^2

EPD:                                    < 5000cm^2

Please click here to see Dislocation vs Thickness of GaN template

ensuring precise and real temperature reading from inside the cell

3/8" OD larger diameter Alumina tube is made by high purity 99

Boron-Doped Diamond on Silicon Substrate Orientation 10-10 EPD: < 5000cm^2A Boron Doped Diamond (BDD) on Silicon Substrate (Si) is a high performance material that combines the excellent properties of diamond with the versatility of silicon. The substrate consists of a conductive silicon wafer that is coated with a thin layer of boron doped diamond. Boron doping introduces p type conductivity to the diamond layer, enhancing its electrical properties and making it suitable for use in electrochemical applications. This