GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum Film

GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum FilmGaAs single crystal wafer Growing Method: VGF Orientation: (110) Primary Flat: EJ(1 10) + 0. 5 degree Secondary Flat: EJ (001) + 0. 5 degree Size: 3" dia x 0. 5mm Polishing: One side polished Doping: Un doped, Semi Insulating Conductor type: S I Carrier Concentration: N A Mobility: 4570 6190cm^2 V. S Resistivity : (0. 89 3. 8)x10^8ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP

The bottom cylinder (piston) is shown in the illustration in the dimension section

Polished surface: One side EPI polished via a special CMP procedure with Ra < 5 A

Orientation: R-plane (11-02) +/- 0

Wafer Size:                    2" dia x  450 microns

Size:                          5x5 x 0

Li-Ion/LiMnNi

Sample Holder & Mini-vise

Optional SS Jars

Corner: Hand Dub (< 0

EQ-HC-BL-600 for BL-SS-600

Pressing die installation schematic            Instruction

Package:                       under 1000 class clean room  in wafer container