InSb (100) 5 x 5 x 0.45 mm, N type, Te doped, 1 side polished GaN Template on Sapphire

InSb (100) 5 x 5 x 0.45 mm, N type, Te doped, 1 side polished GaN Template on Sapphire10x10x0. 45 mm InSb wafer (N type, Te doped) Size: 5x5x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2 Related

04    (74

10 pcs per package for minimum order

The lowest discharging voltage: 0 V

Mobility:                           (1540-1650) cm^2/v

and fuel cell membranes

Half Cell First Discharge Efficiency (%)

This electrode sheet is based on Aluminum foil coated by Lithium Nickel Manganese Cobalt Oxide (NCM622) on a single side and can be used as the cathode of Li-Ion battery -- 5 sheets /bag

Conductor type:                         S-C-N

Note: A KF25 Vacuum Right-Angle Valve is necessary for connecting to a vacuum pump

1mm or less in diameter (colored) Molding Depth

Made of Stainless Steel with double high-temperature silicon O-rings on each flange

Tape Density 1