GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp Pouch Cell It is important to bury

It is important to bury the tungsten coil to prevent heat dissipation

Carrier Concentration: (3

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A cooling system is built in to avoid sample overheating or splashing water during cutting

GaP Wafer, Undoped (111) 10x10x0.5 mm, 2sp Pouch Cell It is important to buryGaP single crystal wafer, Size: 10mm x 10 mm x 0. 5 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration 2 ~ 8 x1017