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InSb (100) 5x5x 0.45 mm, P type, Ge doped, two side polished CeO2 Epi-thin film on YSZ Edge Orientation: (110)±1°
InSb (100) 5x5x 0.45 mm, P type, Ge doped, two side polished CeO2 Epi-thin film on YSZ Edge Orientation: (110)±1°
$125.35
Description
Edge Orientation: (110)±1°
A perfect fit for the cases formed by the standard size MSK-120
Single crystal data may slightly different from the standard due to lattice deformation)
BST2-200A5V
InSb (100) 5x5x 0.45 mm, P type, Ge doped, two side polished CeO2 Epi-thin film on YSZ Edge Orientation: (110)±1°10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 5x5x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1 ohm.
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 5x5x 0.45 mm, P type, Ge doped, two side polished CeO2 Epi-thin film on YSZ Edge Orientation: (110)±1°){kind=link}