Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2

Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2Nickel Film Nickel Film Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 10x10x0. 5mm SiO2 Thichness: 300 nm Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click picture to order ) Related Products Thin

MTI diamond blade is hot pressed and sintered by full diamond powder which has a five times longer service life than that of ordinary edge sintered diamond blades

Orientation:      (001) + / - 0

Working Temperature: < 50°C

Volume Density: 5 ~ 5

turn the hydraulic valve to Lock position when not in use

Density:            >80%

It can prevent wafers from damage and contamination during shipping and storage

Polish:           EPI polished by CMP tecnology with less sub-surface lattice damage

Conducting type:                                     Semi-Insulating

9% Size 200mm L x 300mm W x 0

Resistivity:                     1-5 Ohms/cm  (If you would like to measure the resistivity accurately

Over-speed protection