50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2"> 50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other"> Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2 – digilifeset.online

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Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2

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50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2">
Description

Areal Density:    41+/- 2 g/m^2

Graphite Felt (up to 2200ºC ) for Induction Heating system

Wafer Size: 5x5x0

SiC Ceramic Substrates

Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US Crystal Substrate A-Z Areal Density: 41+/- 2 g/m^2Ge Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other

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