Home
»
»
Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods Mobility: 4500-5630 cm^2/V
50 ohm-cm Storage Chambers/Fume Hoods Mobility: 4500-5630 cm^2/V" loading="eager" fetchpriority="high" decoding="async"/>
Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods Mobility: 4500-5630 cm^2/V
$224.22
Description
Mobility: 4500-5630 cm^2/V
5 Hygroscopic slightly yes none No no no no Afterglow % at 6ms < 2 - 40 ns - 0
The full diamond sintered blade is suitable for low speed cutting ( under 1000 RPM) of crystalline oxides or any brittle crystals
The movement speed of the plunger: 150 mm/min (Max) 0
Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm Storage Chambers/Fume Hoods Mobility: 4500-5630 cm^2/VGe Wafer Specification Growing Method: CZ Orientation: (100) + _0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
 3){kind=link}