GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm

heating rate upto 8 oC/second

Edge: Hand Seam (< 0

This aluminum laminated film (115 um ) is used as casing material for polymer Li-Ion battery

Resistivity :                 0

8V @150Ah for single-cell  or  570Wh for battery pack without protection circus

applied voltage

It can adapt various grinding jars from 1

Optional The 4" sintered diamond blade is the replacement for SYJ-150 Low Speed Cutting Saw

Polishing:                     single side polished

50ml Stainless Steel mixing container for Bench-top V-Shape Ball Grinding & Mixing Machine MSK-SFM-11

You may consider ordering a quick connecting flange at extra cost

(Optional) The vacuum pump and fittings are not included