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GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3 Planetary Ball Mills Particle Distribution
GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3 Planetary Ball Mills Particle Distribution
$430.68
Description
Particle Distribution
Surface roughness: < 5A
Material Type: Polyimide
A complete calibration system
GaSb (100), N Type, Te doped, 2"D x0.5mm wafer 1sp Carrier Concentration: (1-8)x10^17 cm^-3 Planetary Ball Mills Particle DistributionHigh quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 5mm, Orientation: (100) Flats: SEMI Dopping: Te doped, Conducting type: N type. Mobility: 2000 3500 cm^2 V. s Carrier Concentration: (1 8)x10^17 cm^ 3 Polish: one side polished. Grown by a special LEC technique , EPD :<1000 cm2 We also provide high resistivity N and P type GaSb wafers. Surface finish (Ra) : < 5A Typical Properties Crystal Structure: cubic a =
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