GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates Parts should not be placed

Parts should not be placed directly onto the inside surface of a hot furnace tube increase thermal shock

These prototype pouch cell can be used to compare various electrode materials in the same cell structure

Surface Roughness: Ra <= 5 Angstrom

The operation is very safe without further certification

GaAs ,Growing Method: VGF (111)B , SI, undoped, 4" dia x 0.625 mm, 2sp Zero Diffraction Plates Parts should not be placedGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 4" dia x 0. 625mm Polishing: Two sides polished Doping: undoped Conductor type: Semi Insulating Resistivity:(2. 13 3. 15)E8 ohm. cm Carrier Concentration: N A Mobility: (4890 5360) cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers