4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US Tabs & Foils & Current Collector tip-collector distance

tip-collector distance

Density is 6 g/cm^3

Travel distance: 20mm

instead loading sample directly inside tube

4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US Tabs & Foils & Current Collector tip-collector distanceSpecifications: Silicon Wafer Type: N P doped Orientation: (100) Size: 4'' dia Thickness: 500 550 um Grade: Prime Flates: 2 SEMI STD on Axis 0 degree off Resistivity: 1 10 ohm. cm Backside: Etch Particles: < 50 @ >0. 20 um TDD: <1E8 cm^2 Film: Ge epi film Thickness: 0. 5 um + 3% Orientation: (100) Type: N type Dopant concentration: ~5E18 cc Current RMS spec: Ra < 2 nm Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers