SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) Be

SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) BePSpecifications Device Layer Diameter: 6" Type Dopant: N type P doped Orientation: <1 0 0>+ . 5 degree Thickness: 2. 50. 5m Resistivity: 1 4 ohm cm Finish: Front Side Polished Buried Thermal Oxide: Thickness: 1. 0um + 0. 1 um Handle Wafers: Type Dopant P Type, B doped Orientation <1 0 0>+ . 5 degree Resistivity: 10 20 ohm cm Thickness: 625 + 15 um Finish: As received (not polished) Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer

atmospheric stability

Pocket Size(mil):    L180*W150*D36 Pocket Size(mm):   L4

8*10-4S/cm

EQ-Lib-CGnP Graphene is a conductive material when preparing a Li-ion battery

Size:                                 100 mm  dia x 0

consisting of equal numbers of boron and nitrogen atoms

Lithium foil is widely used for Li-ion and Li metal rechargeable battery R&D

4PO4 powder with surface carbon coating has the advantages of higher energy density

Orientation: C axi textured

You may order  MSK-110 to seal GA& cell  ( Click Pic below righ )

SOS is primarily used in aerospace and militaryapplications because of its inherent resistance to radiation

Phi (work function):  4