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GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp Al2O3 Sample Plate Use a properly grounded electrical
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp Al2O3 Sample Plate Use a properly grounded electrical
$74.69
Description
Use a properly grounded electrical outlet of the correct voltage and current handling capacity and away from sources of electromagnetic interference
One ZrO2 crucible is included
s PH: 68 Purity:
The pressure gauge is built-in
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp Al2O3 Sample Plate Use a properly grounded electricalGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10x10x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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