VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm Saws and other microelectronics devices

and other microelectronics devices

Application case  VTC-3RF

Outside Dimension after sealing: 45 Width x 62 Length (mm)

Carrier Concerntration:   (1

VGF-Ge Wafer(100) 100mm dia x 0.5 mm, 2SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm Saws and other microelectronics devicesGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 4 Deg. Wafer Size: 100mm dia x 500 microns Surface Polishing: Two sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 128 0. 303Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (1. 07 2. 89) x10^16 c. c Mobility: 1690 2070 cm^2