GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP YAG Mobility: (3330-3850) cm^2/V

Mobility:                       (3330-3850) cm^2/V

1170°C ~ 1450°C (2138°F ~ 2642°F) in H2

you can use W10-30 motor oil as a coolant

Crystal Structure:      Hexagonal

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP YAG Mobility: (3330-3850) cm^2/VGaAs single crystal wafer Growing Method: VGF Orientation: (100) Flat: (01 1) .(011) Size: 100mm dia x 0. 6mm Polishing: two sides polished Ra(Average Roughness) : < 0. 4 nm Doping: undoped Conductor type: Semi Insulating Resistivity: (1. 41 4. 4)E8 Ohm. cm Mobility: 3240 6000 cm2 v. s. EPD: <5000 cm2 EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces