GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3 C (Diamond) Materials Case and cap are

Materials Case and cap are made of  Nickel plated A3 steel

tube to 8mm O

Safe to use without NRTL certification

Die Sleeve Height: 46mmD

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3 C (Diamond) Materials Case and cap areGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (5. 17 9. 38) x 10^17 cm^3 Mobility: 1 168 188 cm^2 V. S EPD: <5000 cm^2 Resistivity: (3. 96 6. 67)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces