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G08600 - SEMI G86 - シリコンチップ(ダイ)の三点曲げテスト方法 Revision:SEMI G86-0303 - Superseded identification

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This Test Method is applicable to slices of silicon with resistivity higher than 3 ·cm for p-type and higher than 1 ·cm for n-type

orgで入手可能となる。初版は2003年11月発行。

• A model of the behavior to be exhibited by semiconductor manufacturing equipment in a SECS-II communication environment

G08600 - SEMI G86 - シリコンチップ(ダイ)の三点曲げテスト方法 Revision:SEMI G86-0303 - Superseded identificationGlobal Assembly and Packaging CommitteeJapanese Packaging Committee2003 110Japanese Regional Standards Committee20031 www. semi. org20033 Referenced SEMI Standards None.

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