Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm Si Detailed demension drawing Max

Detailed demension drawing Max

mm ( open frame )

Operation type: continuous and timed operation (Attention: Considering the best interest of the service life of the motor & gearbox

Diameter: 50

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:0.1-0.5 Ohm.cm Si Detailed demension drawing MaxGe Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal