+ 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um"> SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y This version does not include – digilifeset.online

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SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y This version does not include

$106.88

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This version does not include the Stainless steel vacuum flanges with valves

Various graphs and curves can be created by software based on user definition

Bi-crystal Cu Cu Au Ag Al Ni

Nickel Metallic Film

SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished Y This version does not includeSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1 4"x 1 4" x 0. 26 + 0. 03 mm Polished: Two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp:<25 um

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