InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp O-Ring BOW: <=20 um
$229.43
Description
BOW: <=20 um
Size: 2" diameter(+/_0
24) x10^18 /cm^3
0 MPa is strict maximum)
InP-(VGF- Grown) (100) Sn doped, 2"x0.35mm wafer, 1sp O-Ring BOW: <=20 umInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Sn doped Conducting type: S C N Polish: one side polished Resistivity: (2. 82 2. 99)x10^ 3 ohm. cm Mobility: 2170 2220 cmE2 V. S EPD: <5000 cmE2 Carrier Concerntration: (9. 62 9. 99) x10^17 cm^3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing
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