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VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp GaN Single Crystal which has good resistance to
VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp GaN Single Crystal which has good resistance to
$66.29
Description
which has good resistance to phosphoric acid and alkali solutions
Total Thickness: ~51 um
1or 2 sides polished
Primary Flat: US(01-1)+/-0
VGF-GaAs (100) orientation, Si-doped 5 x 5 x 0.5mm, 1sp GaN Single Crystal which has good resistance toGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 5x5x0. 5mm Polishing: one side polished Doping: Si doped Conductor type: S C N Carrier Concentration: (7. 2 11. 7) x 10^17 cm^3 Mobility: 2170 2650 cm^2 V. S EPD: <5000 cm^2 resistivity: (2. 56 3. 55)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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