SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode 500mL Nylon Jar (optional)

500mL Nylon Jar (optional)

Foil Thickness: 10 um +/- 3 um

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one 62 mm L spacer is included for cutting 18650 and 26650 cylindrical cell

SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm) Cathode 500mL Nylon Jar (optional)Silicon Wafer Specifications: Conductive type: SiO2+Ti+Pt thin film on Si(B doped) substrate ,10x5x0. 5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm) Resistivity: <0. 005 ohm. cm Size: 10x5 x 0. 5 mm Polish: one side polished Surface roughness: < 5A, RMS Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater