GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp Conductive Ceramic Substrates D x 22mm I

D x 22mm I

02 mA to 10 mA

Mixing and grinding chemical powder by agate mortar or Ball Mill

The electrospinning process should be confined in an enclosed chamber

GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp Conductive Ceramic Substrates D x 22mm I(GaP single crystal wafer Size: 5mmx5mmx0. 5mm Doping: S doped, Conducting type: N type Orientation: (100)+_30' Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration